IEVref:395-03-40ID:
Language:enStatus: Standard
Term: lithium drifted semiconductor detector
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Definition: compensated semiconductor detector in which the compensated region is obtained by causing lithium (N-type) ions to move through a P-type crystal under an applied electric field at high temperatures, in such a way as to balance (compensate) the bound impurities

Note 1 to entry: This type of detector must be kept at low temperatures to maintain the lithium concentration in the compensated region. These detectors have generally been replaced by high purity detectors which do not require a dopant to create the compensated region.

Note 2 to entry: This entry was numbered 394-28-06 in IEC 60050-394:2007.


Publication date:2014-03
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