IEVref:
523-05-08
ID:
Language:
en
Status:
Standard
Term:
isotropic etching
Synonym1:
Synonym2:
Synonym3:
Symbol:
Definition:
etching process in which the etching rate does not vary with the crystallographic orientation or direction of the energy beams
Note 1 to entry: A typical isotropic etchant for silicon is HF/HNO
3
/CH
3
COOH (HNA) solution.
Publication
date
:
2018-12
Source
IEC 62047-1:2016, 2.5.23
Replaces:
Internal notes:
CO remarks:
TC/SC remarks:
VT remarks:
Domain1:
Domain2:
Domain3:
Domain4:
Domain5:
etching process in which the etching rate does not vary with the crystallographic orientation or direction of the energy beams
Note 1 to entry: A typical isotropic etchant for silicon is HF/HNO
3
/CH
3
COOH (HNA) solution.