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Area: 521: Semiconductor devices and integrated circuits           Index language:

Hide details for [<u>Section 521-01: Introduction to atomic physics</u>]Section 521-01: Introduction to atomic physics
521-01-01
non-quantized system (of particles)
521-01-02
quantized system (of particles)
521-01-03
Maxwell-Boltzmann statistics
521-01-04
Boltzmann relation
521-01-05
Maxwell-Boltzmann velocity-distribution law
521-01-06
Bohr atom
521-01-07
quantum number (of an electron in a given atom)
521-01-08
principal quantum number
521-01-09
orbital quantum number
521-01-10
spin (quantum number)
521-01-11
total angular momentum quantum number
521-01-12
energy level (of a particle)
521-01-13
energy-level diagram
521-01-14
Pauli-Fermi exclusion principle
521-01-15
Fermi-Dirac statistics
521-01-16
Fermi-Dirac function
521-01-17
Fermi level
521-01-18
lone electron
521-01-19
Fermi-Dirac-Sommerfeld velocity distribution law
521-01-20
photoelectric effect
521-01-21
photovoltaic effect
521-01-22
photoconductive effect
521-01-23
photoelectromagnetic effect
Hide details for [<u>Section 521-02: Properties of semiconductor materials</u>]Section 521-02: Properties of semiconductor materials
521-02-01
semiconductor
521-02-02
single-element semiconductor
521-02-03
compound semiconductor
521-02-04
impurity
521-02-05
impurity activation energy
521-02-06
ionic semiconductor
521-02-07
intrinsic semiconductor
521-02-08
extrinsic semiconductor
521-02-09
N-type semiconductor
521-02-10
P-type semiconductor
521-02-11
compensated semiconductor
521-02-12
non-degenerate semiconductor
521-02-13
degenerate semiconductor
521-02-14
conduction electron
521-02-15
conduction current
521-02-16
conductor
521-02-17
hole
521-02-18
hole conduction
521-02-19
electron conduction
521-02-20
intrinsic conduction
521-02-21
ionic conduction
521-02-22
conduction band
521-02-23
valence band
521-02-24
energy gap
521-02-25
energy band
521-02-26
energy band (in a semiconductor)
521-02-27
partially occupied band
521-02-28
excitation band
521-02-29
permitted band
521-02-30
forbidden band
521-02-31
insulant
521-02-32
filled band
521-02-33
empty band
521-02-34
surface band
521-02-35
local level
521-02-36
impurity level
521-02-37
impurity band
521-02-38
donor
521-02-39
acceptor
521-02-40
donor level
521-02-41
acceptor level
521-02-42
surface level
521-02-43
ionizing energy of donor
521-02-44
ionizing energy of acceptor
521-02-45
ideal crystal
521-02-46
stochiometric composition
521-02-47
imperfection (of a crystal lattice)
521-02-48
intrinsic conductivity
521-02-49
N-type conductivity
521-02-50
P-type conductivity
521-02-51
(charge) carrier (in a semiconductor)
521-02-52
majority carrier (in a semiconductor region)
521-02-53
minority carrier (in a semiconductor region)
521-02-54
excess carrier
521-02-55
conductivity modulation (of a semiconductor)
521-02-56
surface recombination velocity
521-02-57
bulk lifetime (of minority carriers)
521-02-58
(drift) mobility (of a charge carrier)
521-02-59
diffusion (in a semiconductor)
521-02-60
diffusion length (of minority carriers)
521-02-61
diffusion constant (of charge carriers)
521-02-62
charge carrier storage (in a semiconductor)
521-02-63
trap
521-02-64
recombination centre
521-02-65
PN boundary
521-02-66
transition region
521-02-67
impurity concentration transition zone
521-02-68
neutral region
521-02-69
potential barrier
521-02-70
potential barrier (of a PN junction)
521-02-71
Schottky barrier
521-02-72
junction
521-02-73
abrupt junction
521-02-74
progressive junction
521-02-75
alloyed junction
521-02-76
diffused junction
521-02-77
grown junction
521-02-78
PN junction
521-02-79
space-charge region
521-02-80
space-charge region (of a PN junction)
521-02-81
internal electric field
521-02-82
depletion layer (of a semiconductor)
521-02-83
tunnel effect (in a PN junction)
521-02-84
magnetoresistive effect
521-02-85
piezoresistive effect
Hide details for [<u>Section 521-03: Processing semiconductor materials</u>]Section 521-03: Processing semiconductor materials
521-03-01
growing by pulling (of a single crystal)
521-03-02
growing by zone melting (of a single crystal)
521-03-03
zone refining
521-03-04
zone levelling
521-03-05
doping (of a semiconductor)
521-03-06
impurity compensation
521-03-07
alloy technique
521-03-08
diffusion technique
521-03-09
planar technique
521-03-10
micro-alloy technique
521-03-11
mesa technique
521-03-12
epitaxy
521-03-13
surface passivation
521-03-14
ion implantation
521-03-15
vapour-phase deposition technique
521-03-16
screen-printing technique
521-03-17
sputtering
Hide details for [<u>Section 521-04: Types of semiconductor devices</u>]Section 521-04: Types of semiconductor devices
521-04-01
semiconductor device
521-04-02
discrete (semiconductor) device
521-04-03
(semiconductor) diode
521-04-04
signal diode
521-04-05
tunnel diode
521-04-06
unitunnel diode
521-04-07
variable-capacitance diode
521-04-08
mixer diode
521-04-09
frequency-multiplication diode
521-04-10
modulator diode
521-04-11
detector diode
521-04-12
snap-off diode
521-04-13
switching diode
521-04-14
microwave switching diode
521-04-15
microwave limiting diode
521-04-16
voltage-reference diode
521-04-17
voltage-regulator diode
521-04-18
current-regulator diode
521-04-19
(semiconductor) rectifier diode
521-04-20
avalanche rectifier diode
521-04-21
(semiconductor) rectifier stack
521-04-22
thermistor
521-04-23
semiconductor thermoelement
521-04-24
Hall effect device
521-04-25
Hall modulator
521-04-26
Hall generator
521-04-27
Hall multiplier
521-04-28
Hall probe
521-04-29
magnetoresistor
521-04-30
Corbino disc
521-04-31
optoelectronic device
521-04-32
photodiode
521-04-33
photoconductive cell
521-04-34
photovoltaic cell
521-04-35
photoemitter
521-04-36
optoelectronic display
521-04-37
laser diode
521-04-38
laser-diode module
521-04-39
light-emitting diode
521-04-40
infrared-emitting diode
521-04-41
(semiconductor) photosensitive device
521-04-42
(semiconductor) photoelectric detector
521-04-43
photoresistor
521-04-44
avalanche photodiode
521-04-45
photocoupler
521-04-46
transistor
521-04-47
bipolar junction transistor
521-04-48
unipolar transistor
521-04-49
bidirectional transistor
521-04-50
tetrode transistor
521-04-51
phototransistor
521-04-52
field-effect transistor
521-04-53
junction-gate field-effect transistor
521-04-54
insulated-gate field-effect transistor
521-04-55
metal-oxide-semiconductor field-effect transistor
521-04-56
N-channel field-effect transistor
521-04-57
P-channel field-effect transistor
521-04-58
depletion type field-effect transistor
521-04-59
enhancement type field-effect transistor
521-04-60
metal-semiconductor-field-effect transistor
521-04-61
thyristor
521-04-62
reverse blocking diode thyristor
521-04-63
reverse blocking triode thyristor
521-04-64
reverse conducting diode thyristor
521-04-65
reverse conducting triode thyristor
521-04-66
bidirectional diode thyristor
521-04-67
bidirectional triode thyristor
521-04-68
turn-off thyristor
521-04-69
P-gate thyristor
521-04-70
N-gate thyristor
521-04-71
asymmetrical thyristor
521-04-72
photothyristor
Hide details for [<u>Section 521-05: General terms for semiconductor devices</u>]Section 521-05: General terms for semiconductor devices
521-05-01
electrode (of a semiconductor device)
521-05-02
terminal (of a semiconductor device)
521-05-03
forward direction (of a PN junction)
521-05-04
reverse direction (of a PN junction)
521-05-05
negative differential resistance region
521-05-06
breakdown (of a reverse-biased PN junction)
521-05-07
avalanche breakdown (of a PN junction)
521-05-08
avalanche voltage
521-05-09
Zener breakdown (of a PN junction)
521-05-10
Zener voltage
521-05-11
thermal breakdown (of a PN junction)
521-05-12
punch-through (between two PN junctions)
521-05-13
thermal resistance
521-05-14
virtual temperature
521-05-15
virtual (equivalent) junction temperature
521-05-16
thermal capacitance
521-05-17
floating voltage
521-05-18
recovered charge (of a diode or thyristor)
521-05-19
threshold voltage (of a diode or thyristor)
521-05-20
cut-off frequency
521-05-21
delay-time
521-05-22
rise time
521-05-23
carrier storage time
521-05-24
fall time
521-05-25
forward recovery time
521-05-26
reverse recovery time
521-05-27
electrostatic-discharge-sensitive device
521-05-28
substrate
521-05-29
wafer
521-05-30
chip
521-05-31
package
521-05-32
lead frame (of a package)
521-05-33
heat sink
521-05-34
circuit parameter
521-05-35
equivalent circuit
521-05-36
parasitic circuit element
Hide details for [<u>Section 521-06: Specific terms for diodes</u>]Section 521-06: Specific terms for diodes
521-06-01
peak point (of a tunnel diode)
521-06-02
valley point (of a tunnel diode)
521-06-03
projected peak point (of a tunnel diode)
521-06-04
resistive cut-off frequency
521-06-05
forward slope resistance
Hide details for [<u>Section 521-07: Specific terms for transistors</u>]Section 521-07: Specific terms for transistors
521-07-01
emitter junction
521-07-02
collector junction
521-07-03
base
521-07-04
emitter
521-07-05
collector
521-07-06
channel (of a field-effect transistor)
521-07-07
source (of a field-effect transistor)
521-07-08
drain (of a field-effect transistor)
521-07-09
gate (of a field-effect transistor)
521-07-10
depletion mode operation
521-07-11
enhancement mode operation
521-07-12
inverse direction of operation
521-07-13
common base
521-07-14
common collector
521-07-15
common emitter
521-07-16
inverse common base
521-07-17
inverse common collector
521-07-18
inverse common emitter
521-07-19
small-signal short-circuit forward current transfer ratio
521-07-20
static forward current transfer ratio
521-07-21
transition frequency
521-07-22
frequency of unity current transfer ratio
521-07-23
cut-off voltage (of a depletion type field-effect transistor)
521-07-24
threshold voltage (of an enhancement type field-effect transistor)
521-07-25
transconductance (of a field-effect transistor)
Hide details for [<u>Section 521-08: Specific terms for thyristors</u>]Section 521-08: Specific terms for thyristors
521-08-01
gate
521-08-02
principal current
521-08-03
main terminal
521-08-04
principal voltage
521-08-05
principal (voltage-current) characteristic
521-08-06
anode-to-cathode (voltage-current) characteristic
521-08-07
on-state
521-08-08
off-state
521-08-09
reverse blocking state (of a reverse blocking thyristor)
521-08-10
holding current
521-08-11
latching current
521-08-12
breakover point
521-08-13
on-state slope resistance
521-08-14
gate trigger current
521-08-15
gate trigger voltage
521-08-16
gate non-trigger voltage
521-08-17
gate non-trigger current
521-08-18
critical rate of rise of off-state voltage
521-08-19
critical rate of rise of on-state current
Hide details for [<u>Section 521-09: Specific terms for hall-effect devices and magneto resistors</u>]Section 521-09: Specific terms for hall-effect devices and magneto resistors
521-09-01
Hall effect
521-09-02
Hall coefficient
521-09-03
Hall angle
521-09-04
Hall mobility
521-09-05
Hall voltage
521-09-06
Hall terminals
521-09-07
control current terminal (of a Hall generator)
521-09-08
effective induction area of the output loop
521-09-09
effective induction area of the control current loop
521-09-10
self field (of a Hall generator)
521-09-11
control current (of a Hall generator)
521-09-12
magnetic sensitivity (of a Hall probe)
521-09-13
control current sensitivity (of a Hall probe)
521-09-14
residual voltage for zero current control (of a Hall-effect probe)
521-09-15
residual voltage for zero magnetic field (of a Hall-effect device)
521-09-16
induced control voltage (of a Hall-effect device)
521-09-17
magnetoresistive characteristic curve
521-09-18
magnetoresistive coefficient
521-09-19
magnetoresistive ratio
521-09-20
magnetoresistive sensitivity
Hide details for [<u>Section 521-10: Specific terms for integrated circuits</u>]Section 521-10: Specific terms for integrated circuits
521-10-01
microelectronics
521-10-02
microcircuit
521-10-03
integrated circuit
521-10-04
microassembly
521-10-05
semiconductor integrated circuit
521-10-06
film integrated circuit
521-10-07
film (of a film integrated circuit)
521-10-08
thin film (of a film integrated circuit)
521-10-09
thick film (of a film integrated circuit)
521-10-10
multi-chip integrated circuit
521-10-11
latch-up state
Hide details for [<u>Section 521-11: Specific terms for digital integrated circuits</u>]Section 521-11: Specific terms for digital integrated circuits
521-11-01
programmable logic device
521-11-02
programmable logic array
521-11-03
programmable gate array
521-11-04
memory cell
521-11-05
integrated circuit memory
521-11-06
read-only memory
521-11-07
read/write memory
521-11-08
random-access memory
521-11-09
static (read/write) memory
521-11-10
dynamic (read/write) memory
521-11-11
volatile memory
521-11-12
serial access memory
521-11-13
content addressable memory
521-11-14
charge-transfer device
521-11-15
bucket-brigade device
521-11-16
charge-coupled device
521-11-17
charge-transfer image sensor
521-11-18
application specific integrated circuit
521-11-19
semicustom integrated circuit
521-11-20
gate array
521-11-21
cell (in a semiconductor)
521-11-22
macro cell


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